K561 Datasheet PDF - Silicon Zener Diodes (2024)

DatasheetsPDF.com

Part NumberK561
ManufacturerAeroflex
TitleSilicon Zener Diodes
DescriptionSilicon Zener DiodesGlass Axial LeadedLow Level Zener Diodes, Sharp Knee, Low ImpedanceModelK511 K561 K621 K681Zener Voltage Vz VdcTYP5...
Features...
File Size46.76KB
Datasheet K561 PDF File


Similar Ai Datasheet

K50-HC : CMOS / 5.0V / 7.0×5.0AClock Crystal Oscillators Surface Mount Type K50-HC SeriesPb FreeRoHS ConformingFeatures• Miniature ceramic package • Highly reliable with seam welding • CMOS output • Supply voltage VDD=5.0V • ±25ppm availableTable 1Stability Code (ppm)TOPR (°C)Note0 ± 50Standard specificationsS± 30−10 to +70 (Standard)WithonlycertainU ± 25frequenciesF ±100 −40 to +85 With only certain G ± 50 (Extend) frequenciesHow to OrderK50-HC 0 - C S E 25.0000 q w ert yqType(7×5 SMD, 5.0V) wFrequency Stability Code(See Table1) eCMOS Output rDuty Ratio(S: 45% to 55% STD) tEnable/Disable Function(STD) yOscillation Frequency(Ex.: 25.0000MHz)Packaging(Tape &.

K500 : www.DataSheet4U.comK500 Series8 pin DIP, 5.0 Volt, CMOS/TTL, Clock OscillatorPin ConnectionMtronPTI reserves the right to make changes to the product(s) and service(s) described herein without notice. No liability is assumed as a result of their use or application.Please see www.mtronpti.com for our complete offering and detailed datasheets. Contact us for your application specific requirements: MtronPTI 1-800-762-8800.Revision: 3/20/06.

K500F : DESCRIPTION -55°C to +125°C; Air-to-Air; 100 cycles; 10MIL-STD-833, Mtd 1010, Cond. B MIL-STD-883, Mtd 2002, Cond. B MIL-STD-883, Mtd 2002, Cond. MIL-STD 883, Mtd 2007, Cond. BB MIL-STD 883, Mtd 2007, Cond. B MIL-STD-202, Mtd 103 MIL-STD-202, Mtd 103 Cond. B MIL-STD-883, Mtd 1011.7 MIL-STD-883, Mtd 1011.7 Cond. MIL-STD-883, Mtd 3015 Class II B MIL-STD-883, Mtd 3015 Class II MIL-STD-883, Mtd 2022.2 MIL-STD-883, Mtd 1014.8, MIL-STD-883, Mtd 2022.2Cond. A1min. dwell -55°C to +125°C; Air-to-Air; 100 cycles; 10 min. dwell 1500 g’s 1500 g’s 20-2000 Hz; 0.06 inch; 15g’s; 3 planes 20-2000 Hz; 0.06 inch; 40°C; 90%-95% R.H.; 5615g’s; days 3 planes 40°C;to 90%-95% R.H.; 56 days 100°C 0°C; Water-to-.

K500LM109 : www.DataSheet4U.comDataSheet4U.comDataSheeDataSheet4U.comDataSheet 4 U .comwww.DataSheet4U.comet4U.comDataSheet4U.comDataSheeDataSheet4U.comDataSheet 4 U .comwww.DataSheet4U.comet4U.comDataSheet4U.comDataSheeDataSheet4U.comDataSheet 4 U .comwww.DataSheet4U.comet4U.comDataSheet4U.comDataSheeDataSheet4U.comDataSheet 4 U .comwww.DataSheet4U.comet4U.comDataSheet4U.comDataSheeDataSheet4U.comDataSheet 4 U .comwww.DataSheet4U.comet4U.comDataSheet4U.comDataSheeDataSheet4U.comDataSheet 4 U .comwww.DataSheet4U.comet4U.comDataSheet4U.comDataSheeDataSheet4U.comDataSheet 4 U .comwww.DataSheet4U.comet4U.comDataSheet4U.co.

K500LMxxx : .

K500TM131 : К500ТМ131, КС500ТМ131Микросхемы представляют собой 2 0-триггера. Содержат 138 интегральных элементов. Корпус типа 238.16-2, масса не более 1,2 г и типа 2103.16-3, масса не более 2,5 г.Условное графическое обозначение К500ТМ131Назначение выводов: 1, 16 — общие; 2 — выход 01; 3 — ин­ версный выход 01; 4 — вход #1; 5 — вход 51; б — инверсный вход Е1; 7 — вход 01; 8 — напряжение питания; 9 — вход С, 10 — вход 02; 11 — инверсный вход Е2; 12— вход 52; 13— вход Я2; 14— инверсный выход 02; 15— выход 02.Электрические параметрыНоминальное напряжение питания Выходное напряжение высокого у.

K50EEH5 : IKW50N65EH5HighspeedseriesfifthgenerationHighspeed5IGBTinTRENCHSTOPTM5technologycopackedwithfull-ratedRAPID1fastandsoftantiparalleldiodeFeaturesandBenefits:CHighspeedH5technologyoffering •Best-in-Classefficiencyinhardswitchingandresonant topologies •PlugandplayreplacementofpreviousgenerationIGBTs •650Vbreakdownvoltage •LowgatechargeQG •IGBTcopackedwithfull-ratedRAPID1fastandsoftantiparallel diode •Maximumjunctiontemperature175°C •QualifiedaccordingtoJEDECfortargetapplications •Pb-freeleadplating;RoHScompliant •CompleteproductspectrumandPSpiceModels: http://www.infineon.com/igbt/G EApplications:.

K50EES5 : 2 Table of Contents . 3 Maximum Ratings . 4 Thermal Resistance . . 4 Electrical Characteristics . . .

K50F : www.DataSheet4U.com2,500 V - 10,000 V Rectifiers1.5 A - 3.0 A Forward Current 200 ns Recovery TimeAXIAL LEADED EPOXY MOLDEDK25F K50F K100FELECTRICAL CHARACTERISTICS AND MAXIMUM RATINGSPart Number Working Reverse Voltage (Vrwm) Average Rectified Current (Io) 55°C(1) Volts K25F K50F K100F Amps 100°C(2) Amps 25°C µA Reverse Current @ Vrwm (Ir) 100°C µA 25°C Volts Amps Foward Voltage 1 Cycle Repetitive Reverse Surge Surge Recovery Current Current Time tp=8.3ms (3) (Ifsm) (Ifrm) (Trr) 25°C Amps 25°C Amps 25°C ns Thermal Impedance Junction Cap. @50VDC @ 1kHZ (Cj)5(Vf)uJ-LL=.000 L=.250 °C/W °C/WpF2500 5000 100003.00 2.20 1.501.50 1.10 0.752.0 2.0 2.0100 100 1006.5 9.5 .

K50H-3C : CMOS / 3.3V / 7.0×5.0AClock Crystal Oscillators Surface Mount Type K50H-3C SeriesFeatures• Miniature ceramic package • Highly reliable with seam welding • CMOS output • Supply voltage VDD=3.3V • Internal Bypass Capacitor • Low Jitter • ±25ppm availableTable 1How to OrderK50H-3C 0 - S E 125.000 q w er tqType(7×5 SMD, 3.3V) wFrequency Stability Code(See Table1) eDuty Ratio(S: 45% to 55% STD) rEnable/Disable Function(STD) tOscillation Frequency(Ex.: 125.000MHz)Pb FreeSpecificationsRoHS ConformingStability Code (ppm)TOPR (°C)Note0 ± 50Standard specificationsS± 30−10 to +70 (Standard)WithonlycertainU ± 25frequenciesF ±100 −40 to +85 With only certain G ±.

K50H603 : 2 Table of Contents . 3 Maximum ratings . . 4 Thermal Resistance . . 4 Electrical Characteristics . .

K50N60T : IKW50N60TTRENCHSTOP™ SeriesqLow Loss DuoPack : IGBT in TRENCHSTOP™ and Fieldstop technology with soft, fast recovery anti-parallel Emitter Controlled HE diodeFeatures: Very low VCE(sat) 1.5V (typ.)  Maximum Junction Temperature 175°C  Short circuit withstand time 5s  Designed for :- Frequency Converters - Uninterrupted Power Supply  TRENCHSTOP™ and Fieldstop technology for 600V applications offers : - very tight parameter distribution - high ruggedness, temperature stable behavior - very high switching speed  Positive temperature coefficient in VCE(sat)  Low EMI  Low Gate Charge  Very soft, fast recovery anti-parallel Emitter Controlled HE diode  Qualified according to J.

K50P100M100SF2 : Freescale Semiconductor Data Sheet: Technical DataK50 Sub-Family Data SheetSupports the following: MK50DX256ZCLL10, MK50DN512ZCLL10Features • Operating Characteristics– Voltage range: 1.71 to 3.6 V – Flash write voltage range: 1.71 to 3.6 V – Temperature range (ambient): -40 to 85°C• Performance – Up to 100 MHz ARM Cortex-M4 core with DSP instructions delivering 1.25 Dhrystone MIPS per MHz• Memories and memory interfaces – Up to 512 KB program flash memory on nonFlexMemory devices – Up to 128 KB RAM – Serial programming interface (EzPort) – FlexBus external bus interface• Clocks – 3 to 32 MHz crystal oscillator – 32 kHz crystal oscillator – Multi-purpose clock generator• System perip.

K50P121M100SF2V2 : Freescale Semiconductor Data Sheet: Technical DataDocument Number: K50P121M100SF2V2 Rev. 3, 6/2013K50 Sub-FamilySupports the following: MK50DX256CMC10, MK50DN512CMC10Features • Operating Characteristics– Voltage range: 1.71 to 3.6 V – Flash write voltage range: 1.71 to 3.6 V – Temperature range (ambient): -40 to 85°C• Performance – Up to 100 MHz ARM Cortex-M4 core with DSP instructions delivering 1.25 Dhrystone MIPS per MHz• Memories and memory interfaces – Up to 512 KB program flash memory on nonFlexMemory devices – Up to 256 KB program flash memory on FlexMemory devices – Up to 256 KB FlexNVM on FlexMemory devices – 4 KB FlexRAM on FlexMemory devices – Up to 128 KB RAM – Serial pr.

K50P64M72SF1 : Freescale Semiconductor Data Sheet: Technical DataK50 Sub-FamilySupports: MK50DX128CLH7Features • Operating Characteristics– Voltage range: 1.71 to 3.6 V – Flash write voltage range: 1.71 to 3.6 V – Temperature range (ambient): -40 to 85°C• Clocks – 3 to 32 MHz crystal oscillator – 32 kHz crystal oscillator – Multi-purpose clock generator• System peripherals – Multiple low-power modes to provide power optimization based on application requirements – 16-channel DMA controller, supporting up to 63 request sources – External watchdog monitor – Software watchdog – Low-leakage wakeup unit• Security and integrity modules – Hardware CRC module to support fast cyclic redundancy checks – 128-b.

K50P81M72SF1 : Freescale Semiconductor Data Sheet: Technical DataK50 Sub-FamilySupports: MK50DX128CLK7, MK50DX256CLK7Features • Operating Characteristics– Voltage range: 1.71 to 3.6 V – Flash write voltage range: 1.71 to 3.6 V – Temperature range (ambient): -40 to 85°C• Clocks – 3 to 32 MHz crystal oscillator – 32 kHz crystal oscillator – Multi-purpose clock generator• System peripherals – Multiple low-power modes to provide power optimization based on application requirements – 16-channel DMA controller, supporting up to 63 request sources – External watchdog monitor – Software watchdog – Low-leakage wakeup unit• Security and integrity modules – Hardware CRC module to support fast cyclic redundancy.

K50T60 : IKW50N60TTRENCHSTOP™ SeriesqLow Loss DuoPack : IGBT in TRENCHSTOP™ and Fieldstop technology with soft, fast recovery anti-parallel Emitter Controlled HE diodeFeatures: Very low VCE(sat) 1.5V (typ.)  Maximum Junction Temperature 175°C  Short circuit withstand time 5s  Designed for :- Frequency Converters - Uninterrupted Power Supply  TRENCHSTOP™ and Fieldstop technology for 600V applications offers : - very tight parameter distribution - high ruggedness, temperature stable behavior - very high switching speed  Positive temperature coefficient in VCE(sat)  Low EMI  Low Gate Charge  Very soft, fast recovery anti-parallel Emitter Controlled HE diode  Qualified according to J.

Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site.()
K561 Datasheet PDF - Silicon Zener Diodes (2024)

FAQs

How can you tell if a Zener diode is normal silicon diode? ›

A zener diode can be easily distinguished from regular diodes by its code and breakdown voltage (Zener voltage) which are clearly printed on it.

What is the voltage of a silicon diode Zener? ›

Breakdown voltage for commonly available Zener diodes can vary from 1.2 V to 200 V. For diodes that are lightly doped, the breakdown is dominated by the avalanche effect rather than the Zener effect. Consequently, the breakdown voltage is higher (over 5.6 V) for these devices.

What is the difference between a silicon diode and a Zener diode? ›

A diode conducts only in one direction, but a zener diode is doped in such a way that it can conduct even in reverse direction with a sharp breakdown voltage. The basic application level difference is that while a simple diode is used mainly for rectification purpose, a zener diode is used for voltage regulation.

How do you solve a Zener diode? ›

Calculating values from circuit diagram about a Zener diode
  1. Find the current ID through the diode (D1).
  2. ID=11−101000=1 mA, is the maximum current through the Zener diode.
  3. Find the current IR through the resistor (R1).
  4. IR=ID, same current because they are in series.
  5. Find the voltage VD across the diode (D1).
Oct 27, 2021

How to tell if a zener diode is bad? ›

If the multimeter shows a low resistance value, such as zero or short circuit, it means that the zener diode is defective or damaged.

What is the typical reading for a silicon diode? ›

Diode test analysis. A good forward-based diode displays a voltage drop ranging from 0.5 to 0.8 volts for the most commonly used silicon diodes.

How much voltage do you usually need to turn a silicon diode on? ›

Silicon diodes, most commonly used for rectifiers and signals it is 0.6 to 0.7 volts. For less frequently used Germanium diodes it is 0.2 volts. For LED of different colors it can range from about 2 volts to 4 volts.

What is the cut off voltage of a silicon diode? ›

Silicon diode: cutoff occurs when Vf falls below apx 0.7 V.

What happens when a Zener diode is connected in the reverse mode? ›

A Zener diode functions similarly to a regular diode when forward-biased. However, in reverse-biased mode, a small leakage current flows through the diode. As the reverse voltage increases and reaches the predetermined breakdown voltage (Vz), current begins to flow through the diode.

Why use Zener diode instead of diode? ›

What is the Difference Between a Diode and a Zener Diode? As noted, a diode is a semiconductor that conducts in a single direction only, whereas a zener diode conducts in both forward and reverse biased directions. If a normal diode operated in reverse, it would be destroyed, though no damage occurs with a zener diode.

Why would you use silicon diodes instead of germanium diodes? ›

The main reasons for silicon diodes to be preferred over germanium diodes are: Silicon diode is easier to produce than germanium diode due to the widespread availability of silicon. The silicon diode is less sensitive than the germanium diode, hence the operation of silicon diodes is stable with changes in temperature.

How do you know if a diode is silicon? ›

You can easily distinguish Silicon and Germanium Diodes. Silicon diodes should read approx 0.7V and Germanium diodes should read 0.3V. A little difficult to distinguish Schottky diodes though. They should show approx 0.2V which is close to 0.3V.

What destroys a Zener diode? ›

Excessive temperature will destroy a zener diode, and because it both drops voltage and conducts current, it produces its own heat in accordance with Joule's Law (P=IE). Therefore, one must be careful to design the regulator circuit in such a way that the diode's power dissipation rating is not exceeded.

Can you parallel Zener diodes? ›

Do not connect Zener diodes in parallel because current might concentrate only on one diode. Typ. Please also refer to the FAQ below.

What is the main cause of Zener diode breakdown? ›

The main cause of Zener breakdown is. the base semiconductor being germanium. production of electron-hole pairs due to thermal excitation.

How do you identify a normal diode and zener diode? ›

What is the Difference Between a Diode and a Zener Diode? As noted, a diode is a semiconductor that conducts in a single direction only, whereas a zener diode conducts in both forward and reverse biased directions. If a normal diode operated in reverse, it would be destroyed, though no damage occurs with a zener diode.

How do I know what kind of diode I have? ›

5.1 Diode identification

European diodes are marked using two or three letters and a number. The first letter is used to identify the material used in manufacturing the component (A - germanium, B - silicon), or, in case of letter Z, a Zener diode. The second and third letters specify the type and usage of the diode.

What is the difference between silicon germanium and Zener diode? ›

Germanium and Silicon are primary semi-conductor materials used for making semiconductor devices like diode, transistor, MOSFETs, JFETs, etc. While a zener diode is semi-conductor device which is heavily doped. So zener diode can be made of germanium and silicon depending on its application.

Top Articles
Latest Posts
Article information

Author: Twana Towne Ret

Last Updated:

Views: 6193

Rating: 4.3 / 5 (64 voted)

Reviews: 95% of readers found this page helpful

Author information

Name: Twana Towne Ret

Birthday: 1994-03-19

Address: Apt. 990 97439 Corwin Motorway, Port Eliseoburgh, NM 99144-2618

Phone: +5958753152963

Job: National Specialist

Hobby: Kayaking, Photography, Skydiving, Embroidery, Leather crafting, Orienteering, Cooking

Introduction: My name is Twana Towne Ret, I am a famous, talented, joyous, perfect, powerful, inquisitive, lovely person who loves writing and wants to share my knowledge and understanding with you.